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The JFET is always operated with the gate-source pn junction reverse-biased. This field or resistance limits the amount of current flow through RD. With more VGG (reverse bias) the field (in white) grows larger. The current is controlled by a field that is developed by the reverse biased gate-source junction (gate is connected to both sides). VDD provides a drain-to-source voltage and supplies current from drain to source. The JFET – Basic Operation Figureshows dc bias voltages applied to an channel device. A representation of the basic structure of the two types of JFET. Two p-type regions are diffused in the n-channel, and both p-type regions are connected to the gate lead. Wire leads are connected to each end of n-channel the drain is at the upper end, and the source is at the lower end. The JFET Figure (a) shows the basic structure of an n-channel JFET (junction field-effect transistor). VGGvoltage levels control current flow in the VDD, RD circuit. JFETs can be used as an amplifier just like the BJT. As you will recall the transistor uses current flow through the base-emitter junction to control current. The JFET uses voltage to control the current flow. The difference is the way this is accomplished. The JFET The junction field effect transistor, like a BJT, controls current flow. Overall the purpose of the FET is the same as the BJT. The FET’s major advantage over the BJT is high input resistance. It is a voltage-controlled device, where the voltage between two of the terminal (gate and source) controls the current through the device.

Recall that a BJT is a current-controlled device that is, the base current controls the amount of collector current. Now we will discuss the second major type of transistor, the FET (field-effect transistor).

Biasing MOSFET Key Words: FET, JFET, Voltage Controlled Device, Pinch Off, Cut Off, MOSFET ET212 Electronics-FETs Floyd 2įET - Introduction BJTs (bipolar junction transistors) were covered in previous chapters.

Metal Oxide Semiconductor Field Effect Transistors (MOSFET).

Introduction to Field Effect Transistors (FET).

I hope this module is helpful to enhance our students’ academic performance. I would like to thank the Department of Electrical and Telecommunications Engineering Technology of NYCCT for giving me support to commence and complete this module. Field Effect Transistor (FET) ET 212 Electronics Electrical and Telecommunication Engineering Technology Professor JangĪcknowledgement I want to express my gratitude to Prentice Hall giving me the permission to use instructor’s material for developing this module.